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inchange semiconductor product specification silicon npn power transistors BD241/a/b/c description ? ? with to-220c package ? complement to type bd242/a/b/c applications ? for medium power linear and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD241 55 BD241a 70 BD241b 90 v cbo collector-base voltage BD241c open emitter 115 v BD241 45 BD241a 60 BD241b 80 v ceo collector-emitter voltage BD241c open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i cm collector current-peak 5 a i b base current 1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BD241/a/b/c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD241 45 BD241a 60 BD241b 80 v ceo(sus) collector-emitter sustaining voltage BD241c i c =30ma; i b =0 100 v v cesat collector-emitter saturation voltage i c =3a;i b =0.6 a 1.2 v v be base-emitter on voltage i c =3a ; v ce =4v 1.8 v BD241/a v ce =30v; i b =0 i ceo collector cut-off current BD241b/c v ce =60v; i b =0 0.3 ma BD241 v ce =45v; v be =0 BD241a v ce =60v; v be =0 BD241b v ce =80v; v be =0 i ces collector cut-off current BD241c v ce =100v; v be =0 0.2 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =1a ; v ce =4v 25 h fe-2 dc current gain i c =3a ; v ce =4v 10
inchange semiconductor product specification 3 silicon npn power transistors BD241/a/b/c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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